Updating the docs

process_steps/process_hightech/process_hightech_fox.tex

@@ -25,7 +25,7 @@ The LTO thickness has been chosen to be 200nm which is thin enough for the polys
 
 \subsection{Oxide deposition}
 
-Now we need to deposit the silicon dioxide which will provide a spacer between the non active area and the polysilicon gate layer. within the non-active areas.
+Now we need to deposit the silicon dioxide which will provide a spacer between the non active area and the polysilicon gate layer within the non-active areas.
 
 \begin{figure}[H]
 	\centering

process_steps/process_hightech/process_hightech_junctions.tex

@@ -19,5 +19,6 @@ After we've implanted the Boron and Phosphorus, we will drive the whole thing in
 oxide needed to deposit the nitride for the side wall spacers later on in \autoref{nitride_spacers_deposition}.
 
 \newpage
+\input{process_hightech_implant_stop.tex}
 \input{process_hightech_nimplant.tex}
 \input{process_hightech_pimplant.tex}

process_steps/process_hightech/process_hightech_nbase.tex

@@ -15,3 +15,5 @@ The cross section as well as the top view of the targeted geometry are shown in
 The N-well will serve us as an island of N-doped substrate within the P-doped basis substrate.
 
 The dopant dose will be $2.33\times10^{12}cm^{-2}$ at 70 keV.
+
+After the implantation we perform a drive-in in inert atmosphere at $1050\degreesC$ for 30 minutes.