Updating documentation

Will be discussed tonight in Mumble

process_steps/process_hightech/process_hightech_interconnect.tex

@@ -30,7 +30,7 @@ except that the glass layer is the top oxide opening and doesn't get any more me
 
 An example of the general flow can be seen in \autoref{chapter_silicide_and_cmp} where it already has been performed for the interface area between back end and front end process.
 
-We deposit 150nm LTO and etch holes into it, in order to contact through to the lower layer.
+We deposit 1\um LTO, CMP it and etch holes into it, in order to contact through to the lower layer.
 
 For the first metal layer (\autoref{chapter_metal1}), the etch stop is silicide and we have to sputter Nickel, as a diffusion barrier, before we sputter any Aluminum,
 because the $Ti Si_2$ would react with the Aluminum to an high resistivity material.

process_steps/process_hightech/process_hightech_silicification.tex

@@ -135,6 +135,11 @@ The unreacted titanium film on the dielectric layer such as $SiO_2$ or $SiN$ is
 After 2-3 minutes in APM, at room temperature, with a bit mechanical help, all the unreacted Titanium should be gone and the oxide should become visible again.
 Under \textbf{no circumstance} use a solvent containing HF, since $Ti Si_2$ dissolves in HF or any other Fluoride containing solutions.
 
+Better cleaning results can be achieved by adding mechanical stress to the unreacted metal while having it inside the RCA-1 solution,
+so if you can put it into an ultrasonic bath, the RCA-1 cleaning results can be improved by this.
+
+\newpage
+
 \subsection{CMP}\label{chapter_silicide_and_cmp}
 
 After we formed all the active devices and added the silicide in order to reduce the sheet resistance of junctions and contacts we have to make sure that

process_steps/process_hightech/tikz_process_steps/contsts.tex

@@ -26,7 +26,7 @@
 \def\UpperMetalResist{9.0}
 \def\UpperMoreMetalResist{16.0}
 
-\def\CrossSectionOnly{0.2}
+\def\CrossSectionOnly{0.3}
 \def\CrossAndTopSection{0.2}
 \def\CrossAndTopSectionBig{0.3}
 

process_steps/process_hightech/tikz_process_steps/tripple_well.layout.tex

@@ -14,9 +14,9 @@
 
 \fill[nwell,opacity=\OpacityLayout] (35.25,1.00) rectangle (42.25,7.25);
 
-\fill[pbase,opacity=\OpacityLayout] (35.50,2.0) rectangle (36.60,6.25);
+\fill[pbase,opacity=\OpacityLayout] (35.50,2.0) rectangle (36.60,5.00);
 \fill[pbase,opacity=\OpacityLayout] (35.50,5.0) rectangle (42.00,6.25);
-\fill[pbase,opacity=\OpacityLayout] (40.90,2.0) rectangle (42.00,6.25);
+\fill[pbase,opacity=\OpacityLayout] (40.90,2.0) rectangle (42.00,5.00);
 
 \fill[pbase,opacity=\OpacityLayout] (38.20,2.0) rectangle (39.30,4.00);