diff --git a/process_steps/process_hightech/process_hightech_fox.tex b/process_steps/process_hightech/process_hightech_fox.tex
index 7d71b06d8546887ad7d6a1ea1a947191102f98e3..c43c6b88022be019e4b601f8fae80a7f4cc24618 100644
--- a/process_steps/process_hightech/process_hightech_fox.tex
+++ b/process_steps/process_hightech/process_hightech_fox.tex
@@ -25,7 +25,7 @@ The LTO thickness has been chosen to be 200nm which is thin enough for the polys
 
 \subsection{Oxide deposition}
 
-Now we need to deposit the silicon dioxide which will provide a spacer between the non active area and the polysilicon gate layer. within the non-active areas.
+Now we need to deposit the silicon dioxide which will provide a spacer between the non active area and the polysilicon gate layer within the non-active areas.
 
 \begin{figure}[H]
 	\centering
diff --git a/process_steps/process_hightech/process_hightech_junctions.tex b/process_steps/process_hightech/process_hightech_junctions.tex
index 03612d61f4562506b81d289f27d06794aa3c775c..a4230beaba110f0a02ec229b4bc10a1395c224f1 100644
--- a/process_steps/process_hightech/process_hightech_junctions.tex
+++ b/process_steps/process_hightech/process_hightech_junctions.tex
@@ -19,5 +19,6 @@ After we've implanted the Boron and Phosphorus, we will drive the whole thing in
 oxide needed to deposit the nitride for the side wall spacers later on in \autoref{nitride_spacers_deposition}.
 
 \newpage
+\input{process_hightech_implant_stop.tex}
 \input{process_hightech_nimplant.tex}
 \input{process_hightech_pimplant.tex}
diff --git a/process_steps/process_hightech/process_hightech_nbase.tex b/process_steps/process_hightech/process_hightech_nbase.tex
index 124fe0c91955641f0277f83399065d0fad29e3f6..94bc108ca31f56b3d35e5dda2df797681ea88fc8 100644
--- a/process_steps/process_hightech/process_hightech_nbase.tex
+++ b/process_steps/process_hightech/process_hightech_nbase.tex
@@ -15,3 +15,5 @@ The cross section as well as the top view of the targeted geometry are shown in
 The N-well will serve us as an island of N-doped substrate within the P-doped basis substrate.
 
 The dopant dose will be $2.33\times10^{12}cm^{-2}$ at 70 keV.
+
+After the implantation we perform a drive-in in inert atmosphere at $1050\degreesC$ for 30 minutes.
diff --git a/process_steps/process_hightech/process_hightech_steps.pdf b/process_steps/process_hightech/process_hightech_steps.pdf
index 1e83c95f0dde8f4a75442b1e8751da1d804587de..8a82233c71d37cc4d5c40ef27853384ace868914 100644
Binary files a/process_steps/process_hightech/process_hightech_steps.pdf and b/process_steps/process_hightech/process_hightech_steps.pdf differ