diff --git a/process_implementations/hkust/repetitive_steps.yaml b/process_implementations/hkust/repetitive_steps.yaml index 60e3724776d1f1c2c509674b7a2285856bf786de..998761d7f223ddabcdb1000818bc7aaf6156cfd3 100644 --- a/process_implementations/hkust/repetitive_steps.yaml +++ b/process_implementations/hkust/repetitive_steps.yaml @@ -2,7 +2,7 @@ implant_exposure: [ { equipment: PHT-T1, process: "HMDS, PR coating, soft bake", - requirement: "FH 6400L: 3krpm ( $\\approx$1.5\\um ), soft bake: 110\\degreesC 1min", + requirement: "FH 6400L: 3krpm ( $\\approx$1.5\\um ), soft bake: 110\\degreesC 1 minute", }, { equipment: PHT-S1, @@ -12,7 +12,7 @@ implant_exposure: [ { equipment: PHT-T2, process: "Develop, Hard bake", - requirement: "FHD-5, 1min; hard bake: 120\\degreesC, 30min", + requirement: "FHD-5, 1min; hard bake: 120\\degreesC, 30 minutes", }, ] @@ -20,7 +20,7 @@ normal_exposure: [ { equipment: PHT-T1, process: "HMDS, PR coating, soft bake", - requirement: "HPR 504: 3krpm ( $\\approx$1.5\\um ), soft bake: 110\\degreesC 1min", + requirement: "HPR 504: 3krpm ( $\\approx$1.5\\um ), soft bake: 110\\degreesC 1 minute", }, { equipment: PHT-S1, @@ -30,7 +30,7 @@ normal_exposure: [ { equipment: PHT-T2, process: "Develop, Hard bake", - requirement: "FHD-5, 1min; hard bake: 120\\degreesC, 30 min", + requirement: "FHD-5, 1min; hard bake: 120\\degreesC, 30 minutes", }, ] @@ -40,12 +40,12 @@ initial_clean_A: [ { equipment: WET-A3, process: "Initial Cleaning", - requirement: "H2SO4+H2O2, 10mins @ 120\\degreesC", + requirement: "H2SO4+H2O2, 10 minutes @ 120\\degreesC", }, { equipment: WET-A2, process: "HF dip", - requirement: "1 min", + requirement: "1 minute", }, { equipment: SRD-A, diff --git a/process_implementations/hkust/steps_dry.pdf b/process_implementations/hkust/steps_dry.pdf index a7e7c835a310c8e3cc12cb01850d055c8f128b70..e277cdebd51526e2f3dc23b9305f8e420504b7a7 100644 Binary files a/process_implementations/hkust/steps_dry.pdf and b/process_implementations/hkust/steps_dry.pdf differ diff --git a/process_implementations/hkust/steps_dry.yaml b/process_implementations/hkust/steps_dry.yaml index 062d06ba12ed301f718b0bdc46f811756912ea46..947c0848f097a134bdefd1fd159da7ecad9bf291 100644 --- a/process_implementations/hkust/steps_dry.yaml +++ b/process_implementations/hkust/steps_dry.yaml @@ -48,13 +48,13 @@ }, { equipment: CMP-1, - process: "Planarize oxide", - requirement: "10 minutes", + process: "Semi-Sperse 25-E", + requirement: "10 minutes, PT rpm: 40, chuck rpm: 25, back pressure: 2 psi", }, { equipment: WET-G1, process: "Ammonium cleaning", - requirement: "70\\degreesC, 10mins", + requirement: "70\\degreesC, 10 minutes", }, { equipment: WET-C1, @@ -243,7 +243,7 @@ { equipment: WET-E4, process: "Sulfuric resist strip", - requirement: "H2SO4+H2O2, 120\\degreesC, 10mins", + requirement: "H2SO4+H2O2, 120\\degreesC, 10 minutes", }, ], } @@ -302,7 +302,7 @@ { equipment: WET-E4, process: "Sulfuric resist strip", - requirement: "H2SO4+H2O2, 120\\degreesC, 10mins", + requirement: "H2SO4+H2O2, 120\\degreesC, 10 minutes", }, { equipment: SPT-NSC3000, @@ -350,12 +350,12 @@ { equipment: DRY-RIE-2, process: "CHF3 etch", - requirement: "180 seconds", + requirement: "360 seconds", }, { equipment: WET-Y1, process: "Resist strip", - requirement: "10mins", + requirement: "10 minutes", }, ], } @@ -372,13 +372,13 @@ normal_exposure, { equipment: DRY-Metal-1, - process: "Wire formation", - requirement: "200 nm", + process: "Ni-682", + requirement: "3 minutes", }, { equipment: WET-Y1, process: "Resist strip", - requirement: "10mins", + requirement: "10 minutes", }, ], } @@ -411,12 +411,12 @@ { equipment: DRY-RIE-2, process: "CHF3 etch", - requirement: "180 seconds", + requirement: "360 seconds", }, { equipment: WET-Y1, process: "Resist strip", - requirement: "10mins", + requirement: "10 minutes", }, ], } @@ -433,13 +433,13 @@ normal_exposure, { equipment: DRY-Metal-1, - process: "Wire formation", - requirement: "150 nm", + process: "Ni-682", + requirement: "2 minutes", }, { equipment: WET-Y1, process: "Resist strip", - requirement: "10mins", + requirement: "10 minutes", }, ], } @@ -472,12 +472,12 @@ { equipment: DRY-RIE-2, process: "CHF3 etch", - requirement: "180 seconds", + requirement: "360 seconds", }, { equipment: WET-Y1, process: "Resist strip", - requirement: "10mins", + requirement: "10 minutes", }, ], } @@ -494,13 +494,13 @@ normal_exposure, { equipment: DRY-Metal-1, - process: "Wire formation", - requirement: "150 nm", + process: "Ni-682", + requirement: "2 minutes", }, { equipment: WET-Y1, process: "Resist strip", - requirement: "10mins", + requirement: "10 minutes", }, ], } @@ -533,12 +533,12 @@ { equipment: DRY-RIE-2, process: "CHF3 etch", - requirement: "180 seconds", + requirement: "360 seconds", }, { equipment: WET-Y1, process: "Resist strip", - requirement: "10mins", + requirement: "10 minutes", }, ], } diff --git a/process_implementations/hkust/steps_wet.pdf b/process_implementations/hkust/steps_wet.pdf index 5e7d74d683c611678d7f681470d9782e45aae74f..dba62d19c4bcb23d424a99ff27c269a46f2e9434 100644 Binary files a/process_implementations/hkust/steps_wet.pdf and b/process_implementations/hkust/steps_wet.pdf differ