diff --git a/process_implementations/hkust/equipment.yaml b/process_implementations/hkust/equipment.yaml
index cdfbbcfda0d42bae32d7d495f03ef028ed316f83..71d0ebb0dc51f54ab1abca60098f4be95b28718d 100644
--- a/process_implementations/hkust/equipment.yaml
+++ b/process_implementations/hkust/equipment.yaml
@@ -31,6 +31,11 @@ SRD-B: {
 }
 
 # Wet station C 
+WET-C1: {
+        location: P2-01000,
+        equipment: "C1:Nitride Strip",
+        level: clean,
+}
 WET-C3: {
         location: P2-01000,
         equipment: "C3:BOE",
diff --git a/process_implementations/hkust/process.tex b/process_implementations/hkust/process.tex
index f9d780f61e8bf1945165dbc881749c8ea92f1b98..a1a677348ea4ffc2fde04b583b70719d7bcec116 100644
--- a/process_implementations/hkust/process.tex
+++ b/process_implementations/hkust/process.tex
@@ -96,7 +96,7 @@
 	\begin{center}
 	\fbox{\begin{minipage}{\textwidth}
 		\centering
-		\begin{tikzpicture}[node distance = 3cm, auto, thick, scale=0.7, every node/.style={transform shape}]
+		\begin{tikzpicture}[node distance = 3cm, auto, thick, scale=0.6, every node/.style={transform shape}]
 			\input{#2}
 		\end{tikzpicture}\\
 		\textbf{Mask: #3}
@@ -154,7 +154,7 @@
 \maketitle
 \begin{abstract}
 	\input{process_abstract.tex} \\
-	Please see the document with the generic steps\footnote{\url{https://github.com/libresilicon/process/raw/master/process_steps/process_hightech/process_hightech_steps.pdf}}
+	Please see the document with the generic steps\footnote{\url{https://download.libresilicon.com/process/v1/process_hightech_steps.pdf}}
 	in order to get a detailed description of the different steps.	
 \end{abstract}
 \vfill
diff --git a/process_implementations/hkust/repetitive_steps.yaml b/process_implementations/hkust/repetitive_steps.yaml
index d36bebd96486de3e2f3c8bae8b1910d84dd0dd5c..60e3724776d1f1c2c509674b7a2285856bf786de 100644
--- a/process_implementations/hkust/repetitive_steps.yaml
+++ b/process_implementations/hkust/repetitive_steps.yaml
@@ -30,7 +30,7 @@ normal_exposure: [
         {
                 equipment: PHT-T2,
                 process: "Develop, Hard bake",
-                requirement: "FHD-5, 1min; hard bake: 120\\degreesC, 1min",
+                requirement: "FHD-5, 1min; hard bake: 120\\degreesC, 30 min",
         },
 ]
 
diff --git a/process_implementations/hkust/steps_dry.pdf b/process_implementations/hkust/steps_dry.pdf
index 7a18e0d9e0728646b0e4e251974ec2bf7d4e4410..a7e7c835a310c8e3cc12cb01850d055c8f128b70 100644
Binary files a/process_implementations/hkust/steps_dry.pdf and b/process_implementations/hkust/steps_dry.pdf differ
diff --git a/process_implementations/hkust/steps_dry.yaml b/process_implementations/hkust/steps_dry.yaml
index 43cb7c7b38e01ce02714adad994f660a89acaf5d..062d06ba12ed301f718b0bdc46f811756912ea46 100644
--- a/process_implementations/hkust/steps_dry.yaml
+++ b/process_implementations/hkust/steps_dry.yaml
@@ -18,23 +18,38 @@
         cross_tikz: tikz_process_steps/sti.a.tex,
         mask: sti,
         steps: [
-                clean_B,
+                {
+                        equipment: DIF-D1,
+                        process: "Pad oxide growth",
+                        requirement: "10nm, 15 minutes @ 1000\\degreesC in dry environment",
+                        pre: initial_clean_A
+                },
+                {
+                        equipment: CVD-B2,
+                        process: "CMP end stop deposition, Silicon nitride",
+                        requirement: "100nm",
+                },
                 normal_exposure,
+                {
+                        equipment: DRY-RIE-2,
+                        process: "CHF3 etch",
+                        requirement: "4 minutes",
+                },
                 {
                         equipment: DRY-Si-1,
-                        process: "Etching the trenches",
-                        requirement: "Thin line recipe, 1\\um : 7 cycles -> 35 cycles",
+                        process: "SMALL001",
+                        requirement: "2\\um  -> 14 cycles",
                 },
                 asher_resist_strip,
                 {
                         equipment: CVD-B3,
                         process: "Oxide deposition",
-                        requirement: "4\\um LTO",
+                        requirement: "2\\um LTO",
                 },
                 {
                         equipment: CMP-1,
-                        process: "Planarize oxide down to silicon",
-                        requirement: "Use oxide planarization slurry, 15 minutes",
+                        process: "Planarize oxide",
+                        requirement: "10 minutes",
                 },
                 {
                         equipment: WET-G1,
@@ -42,24 +57,23 @@
                         requirement: "70\\degreesC, 10mins",
                 },
                 {
-                        equipment: WET-C3,
-                        process: "HF dip",
-                        requirement: "1 minute",
+                        equipment: WET-C1,
+                        process: "Nitride strip",
+                        requirement: "Remove CMP endstop",
                 },
                 {
-                        equipment: CVD-B3,
-                        process: "Oxide deposition",
-                        requirement: "2\\um LTO",
+                        equipment: DIF-A1,
+                        process: "Densify LTO",
+                        requirement: "30 minutes @ 850\\degreesC in inert atmosphere",
                 },
                 {
-                        equipment: CMP-1,
-                        process: "Planarize oxide down to silicon",
-                        requirement: "Use oxide planarization slurry, 10 minutes",
+                        equipment: WET-A2,
+                        process: "Pad oxide removal/smoothening",
+                        requirement: "3 minutes",
                 },
                 {
-                        equipment: WET-G1,
-                        process: "Ammonium cleaning",
-                        requirement: "70\\degreesC, 10mins",
+                        equipment: SRD-A,
+                        process: "Dry the wafer automatically",
                 },
         ],
 }
@@ -312,16 +326,31 @@
         cross_tikz: tikz_process_steps/contact.a.tex,
         mask: contact,
         steps: [
+                {
+                        equipment: CVD-F4,
+                        process: "Pad oxide deposition",
+                        requirement: "100nm",
+                },
+                {
+                        equipment: CVD-P1,
+                        process: "CMP end stop deposition, Silicon nitride",
+                        requirement: "100nm",
+                },
                 {
                         equipment: CVD-F4,
                         process: "Oxide deposition",
-                        requirement: "150 nm",
+                        requirement: "1\\um",
+                },
+                {
+                        equipment: CMP-4,
+                        process: "Planarize oxide",
+                        requirement: "1 minute",
                 },
                 normal_exposure,
                 {
                         equipment: DRY-RIE-2,
-                        process: "150nm LTO etch",
-                        requirement: "3 minutes",
+                        process: "CHF3 etch",
+                        requirement: "180 seconds",
                 },
                 {
                         equipment: WET-Y1,
@@ -358,16 +387,31 @@
         cross_tikz: tikz_process_steps/via1.a.tex,
         mask: via1,
         steps: [
+                {
+                        equipment: CVD-F4,
+                        process: "Pad oxide deposition",
+                        requirement: "100nm",
+                },
+                {
+                        equipment: CVD-P1,
+                        process: "CMP end stop deposition, Silicon nitride",
+                        requirement: "100nm",
+                },
                 {
                         equipment: CVD-F4,
                         process: "Oxide deposition",
-                        requirement: "150 nm",
+                        requirement: "1\\um",
+                },
+                {
+                        equipment: CMP-4,
+                        process: "Planarize oxide",
+                        requirement: "1 minute",
                 },
                 normal_exposure,
                 {
                         equipment: DRY-RIE-2,
-                        process: "150nm LTO etch",
-                        requirement: "3 minutes",
+                        process: "CHF3 etch",
+                        requirement: "180 seconds",
                 },
                 {
                         equipment: WET-Y1,
@@ -404,16 +448,31 @@
         cross_tikz: tikz_process_steps/via2.a.tex,
         mask: via2,
         steps: [
+                {
+                        equipment: CVD-F4,
+                        process: "Pad oxide deposition",
+                        requirement: "100nm",
+                },
+                {
+                        equipment: CVD-P1,
+                        process: "CMP end stop deposition, Silicon nitride",
+                        requirement: "100nm",
+                },
                 {
                         equipment: CVD-F4,
                         process: "Oxide deposition",
-                        requirement: "150nm",
+                        requirement: "1\\um",
+                },
+                {
+                        equipment: CMP-4,
+                        process: "Planarize oxide",
+                        requirement: "1 minute",
                 },
                 normal_exposure,
                 {
                         equipment: DRY-RIE-2,
-                        process: "150nm LTO etch",
-                        requirement: "3 minutes",
+                        process: "CHF3 etch",
+                        requirement: "180 seconds",
                 },
                 {
                         equipment: WET-Y1,
@@ -450,16 +509,31 @@
         cross_tikz: tikz_process_steps/glass.a.tex,
         mask: glass,
         steps: [
+                {
+                        equipment: CVD-F4,
+                        process: "Pad oxide deposition",
+                        requirement: "100nm",
+                },
+                {
+                        equipment: CVD-P1,
+                        process: "CMP end stop deposition, Silicon nitride",
+                        requirement: "100nm",
+                },
                 {
                         equipment: CVD-F4,
                         process: "Oxide deposition",
-                        requirement: "150nm",
+                        requirement: "1\\um",
+                },
+                {
+                        equipment: CMP-4,
+                        process: "Planarize oxide",
+                        requirement: "1 minute",
                 },
                 normal_exposure,
                 {
                         equipment: DRY-RIE-2,
-                        process: "150nm LTO etch",
-                        requirement: "3 minutes",
+                        process: "CHF3 etch",
+                        requirement: "180 seconds",
                 },
                 {
                         equipment: WET-Y1,
diff --git a/process_implementations/hkust/steps_wet.pdf b/process_implementations/hkust/steps_wet.pdf
index 1e364bda4efbbed3c334a271461ca13bb83c94dd..5e7d74d683c611678d7f681470d9782e45aae74f 100644
Binary files a/process_implementations/hkust/steps_wet.pdf and b/process_implementations/hkust/steps_wet.pdf differ
diff --git a/process_implementations/hkust/tables_generator.py b/process_implementations/hkust/tables_generator.py
index 657f4510144e4000bef94439c0df5ff8a89502ec..1d1573f1d316ec7e7ffcf27344fdc71a71dd6c3a 100755
--- a/process_implementations/hkust/tables_generator.py
+++ b/process_implementations/hkust/tables_generator.py
@@ -3,7 +3,7 @@ import sys
 import yaml
 
 class auto_generator:
-	table_height=10
+	table_height=14
 
 	def getStepEquipment(self,step):
 		try:
@@ -145,12 +145,33 @@ class auto_generator:
 
 		for substep in step_substeps:
 			for step in self.extractSubSteps(substep):
+				try:
+					pre_substep=step['pre']
+				except:
+					pre_substep=False
+
+				try:
+					post_substep=step['post']
+				except:
+					post_substep=False
+
 				eqcode = self.getStepEquipment(step)
-				for stp in self.getRequiredPreSteps(eqcode):
-					ret.append(stp)
+
+				if pre_substep == False:
+					for stp in self.getRequiredPreSteps(eqcode):
+						ret.append(stp)
+				else:
+					for stp in self.extractSubSteps(pre_substep):
+						ret.append(stp)
+
 				ret.append(step)
-				for stp in self.getRequiredPostSteps(eqcode):
-					ret.append(stp)
+
+				if post_substep == False:
+					for stp in self.getRequiredPostSteps(eqcode):
+						ret.append(stp)
+				else:
+					for stp in self.extractSubSteps(post_substep):
+						ret.append(stp)
 
 		return ret