From 069571ad40b9601fea2a6a9547e380344d39f003 Mon Sep 17 00:00:00 2001
From: =?UTF-8?q?David=20Lanzend=C3=B6rfer?= <david.lanzendoerfer@o2s.ch>
Date: Tue, 23 Jul 2019 21:43:08 +0800
Subject: [PATCH] Removing unused chapters

---
 process_design_rules/design_rules_etching.tex | 13 -------------
 process_design_rules/design_rules_optical.tex | 12 ------------
 2 files changed, 25 deletions(-)
 delete mode 100644 process_design_rules/design_rules_etching.tex
 delete mode 100644 process_design_rules/design_rules_optical.tex

diff --git a/process_design_rules/design_rules_etching.tex b/process_design_rules/design_rules_etching.tex
deleted file mode 100644
index b93ce90..0000000
--- a/process_design_rules/design_rules_etching.tex
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-\section{Etching limitations}
-We have established in \autoref{design_rules_lithographic} that our lithographic lower limit is 0.5\um.
-Now in this chapter we look at the different etching machines used for determining their minimum line spacing.
-
-\subsection{Poly etching}
-Because the "Poly Etcher (DRY-Poly)"(\autoref{poly_etcher_machine}) has minimum line space of 0.5\um we are not limited any further beyond what the lithographic limits are.
-The poly layer as well requires a minimum line space of 0.5\um
-
-\subsection{Oxide etching}
-Because the "Trion RIE Etcher (DRY-Trion)"(\autoref{trion_RIE_etch_machine}) has no minimum line space defined we are not limited any further beyond what the lithographic limits are.
-This means that the oxide etching as well requires a minimum line space of 0.5\um.
-
-This plays into the construction design rules for vias and the like.
diff --git a/process_design_rules/design_rules_optical.tex b/process_design_rules/design_rules_optical.tex
deleted file mode 100644
index e5fe038..0000000
--- a/process_design_rules/design_rules_optical.tex
+++ /dev/null
@@ -1,12 +0,0 @@
-\section{Lithographic limitations}\label{design_rules_lithographic}
-When looking at the mask making module "Intertech ISI-2808 Laser Direct Write System" from HKUST (\autoref{mask_maker_machine}) we see the following limitations for the lithographic masks:
-\begin{itemize}
-	\item The Minimum Feature Size of the Laser system is 1.5\um. Any pattern size less than 1.5\um may not come out.
-	\item The grid of the Laser system is 0.25\um, any off grid pattern will be round off or up to the grid location
-\end{itemize}
-
-So the smallest structure \textbf{on the mask} shall be bigger than 1.5\um
-
-If we look at the stepper "ASML Stepper (PHT-S1)" from HKUST(\autoref{lithography_machine}) we see it has a resolution of 0.5\um and a reduction ratio of 5:1
-
-This mean that our feature sizes \textbf{on the wafer} can be around 0.5\um (for sizes below 0.5\um it will require some trickery with multiple overlapping masks in the future)
\ No newline at end of file
-- 
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