diff --git a/process_design_rules/design_rules_etching.tex b/process_design_rules/design_rules_etching.tex deleted file mode 100644 index b93ce90254eb4f765d224c81f219804bfe7fec5e..0000000000000000000000000000000000000000 --- a/process_design_rules/design_rules_etching.tex +++ /dev/null @@ -1,13 +0,0 @@ -\section{Etching limitations} -We have established in \autoref{design_rules_lithographic} that our lithographic lower limit is 0.5\um. -Now in this chapter we look at the different etching machines used for determining their minimum line spacing. - -\subsection{Poly etching} -Because the "Poly Etcher (DRY-Poly)"(\autoref{poly_etcher_machine}) has minimum line space of 0.5\um we are not limited any further beyond what the lithographic limits are. -The poly layer as well requires a minimum line space of 0.5\um - -\subsection{Oxide etching} -Because the "Trion RIE Etcher (DRY-Trion)"(\autoref{trion_RIE_etch_machine}) has no minimum line space defined we are not limited any further beyond what the lithographic limits are. -This means that the oxide etching as well requires a minimum line space of 0.5\um. - -This plays into the construction design rules for vias and the like. diff --git a/process_design_rules/design_rules_optical.tex b/process_design_rules/design_rules_optical.tex deleted file mode 100644 index e5fe038a87edb6002139cecd1c38ace40728017a..0000000000000000000000000000000000000000 --- a/process_design_rules/design_rules_optical.tex +++ /dev/null @@ -1,12 +0,0 @@ -\section{Lithographic limitations}\label{design_rules_lithographic} -When looking at the mask making module "Intertech ISI-2808 Laser Direct Write System" from HKUST (\autoref{mask_maker_machine}) we see the following limitations for the lithographic masks: -\begin{itemize} - \item The Minimum Feature Size of the Laser system is 1.5\um. Any pattern size less than 1.5\um may not come out. - \item The grid of the Laser system is 0.25\um, any off grid pattern will be round off or up to the grid location -\end{itemize} - -So the smallest structure \textbf{on the mask} shall be bigger than 1.5\um - -If we look at the stepper "ASML Stepper (PHT-S1)" from HKUST(\autoref{lithography_machine}) we see it has a resolution of 0.5\um and a reduction ratio of 5:1 - -This mean that our feature sizes \textbf{on the wafer} can be around 0.5\um (for sizes below 0.5\um it will require some trickery with multiple overlapping masks in the future) \ No newline at end of file